MOSIS PARAMETRIC TEST RESULTS RUN: T18H (MM_NON-EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.52 -0.54 volts SHORT 20.0/0.18 Idss 566 -269 uA/um Vth 0.53 -0.54 volts Vpt 4.8 -5.4 volts WIDE 20.0/0.18 Ids0 14.1 -4.9 pA/um LARGE 50/50 Vth 0.42 -0.43 volts Vjbkd 3.8 -5.0 volts Ijlk <50.0 <50.0 pA Gamma 0.52 0.62 V^0.5 K' (Uo*Cox/2) 169.0 -35.8 uA/V^2 Low-field Mobility 401.33 85.01 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask and etch bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL XW ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) -0.02 -0.01 thick oxide -0.03 -0.01 TSMC18 -0.02 0.00 thick oxide -0.02 0.00 SCN6M_SUBM (lambda=0.10) -0.04 0.00 thick oxide -0.07 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS Sheet Resistance 6.8 7.7 8.0 60.3 323.5 0.08 0.08 ohms/sq Contact Resistance 11.4 11.8 10.2 5.36 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS MTL3 MTL4 MTL5 MTL6 N_WELL UNITS Sheet Resistance 0.08 0.08 0.08 0.04 997 ohms/sq Contact Resistance 10.85 17.16 23.12 26.00 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY M1 M2 M3 M4 M5 M6 M5P N_WELL UNITS Area (substrate) 958 1181 94 37 18 12 8 8 3 69 aF/um^2 Area (N+active) 8437 51 19 13 10 9 8 aF/um^2 Area (P+active) 8164 aF/um^2 Area (poly) 62 16 10 7 5 4 aF/um^2 Area (metal1) 35 14 9 6 5 aF/um^2 Area (metal2) 37 14 9 6 aF/um^2 Area (metal3) 38 14 8 aF/um^2 Area (metal4) 36 13 aF/um^2 Area (metal5) 32 1018 aF/um^2 Area (no well) 133 aF/um^2 Fringe (substrate) 252 209 -- 58 53 40 23 -- aF/um Fringe (poly) 66 38 28 23 20 17 aF/um Fringe (metal1) 51 33 22 18 aF/um Fringe (metal2) 47 35 27 21 aF/um Fringe (metal3) 54 34 27 aF/um Fringe (metal4) 58 34 aF/um Fringe (metal5) 50 aF/um Overlap (N+active) 740 aF/um Overlap (P+active) 691 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.75 volts Vinv 1.5 0.79 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.64 volts Vinv 2.0 0.82 volts Gain 2.0 -23.68 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 331.76 MHz DIV1024 (31-stg,1.8V) 385.33 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T18H SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Oct 16/01 * LOT: T18H WAF: 9006 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3526361 +K1 = 0.5766854 K2 = 2.958387E-3 K3 = 1E-3 +K3B = 1.6833481 W0 = 1E-7 NLX = 2.001001E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.4973308 DVT1 = 0.3969242 DVT2 = 0.0717316 +U0 = 284.3085499 UA = -8.79053E-10 UB = 1.505961E-18 +UC = -7.38863E-12 VSAT = 1.043864E5 A0 = 1.9836154 +AGS = 0.3732094 B0 = -1.910842E-8 B1 = -1E-7 +KETA = -4.679983E-4 A1 = 0 A2 = 1 +RDSW = 150 PRWG = 0.5 PRWB = -0.2 +WR = 1 WINT = 0 LINT = 5.152592E-9 +XL = -2E-8 XW = -1E-8 DWG = -6.996111E-9 +DWB = -3.569035E-9 VOFF = -0.0748839 NFACTOR = 2.5 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.0719358 ETAB = -0.0636815 +DSUB = 1 PCLM = 1.242149 PDIBLC1 = 0.2064763 +PDIBLC2 = 0.01 PDIBLCB = -0.1 DROUT = 0.8184847 +PSCBE1 = 1E8 PSCBE2 = 4.441245E-9 PVAG = 0.3902465 +DELTA = 0.01 RSH = 6.8 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.4E-10 CGSO = 7.4E-10 CGBO = 1E-12 +CJ = 9.536601E-4 PB = 0.7232073 MJ = 0.3577199 +CJSW = 2.383932E-10 PBSW = 0.5849491 MJSW = 0.1279856 +CJSWG = 3.3E-10 PBSWG = 0.5849491 MJSWG = 0.1279856 +CF = 0 PVTH0 = 2.421029E-4 PRDSW = -5 +PK2 = -1.383704E-3 WKETA = 4.728981E-3 LKETA = -8.329213E-3 +PU0 = 26.4717342 PUA = 1.032792E-10 PUB = 0 +PVSAT = 1.387043E3 PETA0 = 1E-4 PKETA = 2.32913E-3 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.4093933 +K1 = 0.5624449 K2 = 0.0352021 K3 = 0 +K3B = 11.070112 W0 = 1E-6 NLX = 1.005277E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.5093444 DVT1 = 0.2986541 DVT2 = 0.1 +U0 = 118.4055708 UA = 1.587147E-9 UB = 1.020874E-21 +UC = -1E-10 VSAT = 1.897538E5 A0 = 1.685652 +AGS = 0.3740203 B0 = 1.639526E-6 B1 = 5E-6 +KETA = 0.0168942 A1 = 0.2781551 A2 = 0.5988781 +RDSW = 272.6873597 PRWG = 0.5 PRWB = -0.1877881 +WR = 1 WINT = 0 LINT = 2.182266E-8 +XL = -2E-8 XW = -1E-8 DWG = -3.63508E-8 +DWB = 3.476686E-9 VOFF = -0.096168 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.2100028 ETAB = -0.1452931 +DSUB = 1.2880874 PCLM = 2.5445681 PDIBLC1 = 6.325099E-3 +PDIBLC2 = 0.0509046 PDIBLCB = -1E-3 DROUT = 1.001622E-3 +PSCBE1 = 1.735022E9 PSCBE2 = 5.006145E-10 PVAG = 15 +DELTA = 0.01 RSH = 7.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.91E-10 CGSO = 6.91E-10 CGBO = 1E-12 +CJ = 1.177417E-3 PB = 0.8494071 MJ = 0.4102664 +CJSW = 2.04246E-10 PBSW = 0.6680177 MJSW = 0.2900791 +CJSWG = 4.22E-10 PBSWG = 0.6680177 MJSWG = 0.2900791 +CF = 0 PVTH0 = 4.833134E-3 PRDSW = -1.5203069 +PK2 = 3.394755E-3 WKETA = 0.0269438 LKETA = -2.889328E-3 +PU0 = -2.6386246 PUA = -8.0127E-11 PUB = 1E-21 +PVSAT = -50 PETA0 = -2E-4 PKETA = -2.269918E-3 ) *