MOSIS WAFER ACCEPTANCE TESTS RUN: T53R (MM_NON-EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.52 -0.53 volts SHORT 20.0/0.18 Idss 549 -261 uA/um Vth 0.53 -0.53 volts Vpt 4.7 -5.5 volts WIDE 20.0/0.18 Ids0 14.1 -6.1 pA/um LARGE 50/50 Vth 0.43 -0.44 volts Vjbkd 3.2 -4.1 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 166.3 -35.7 uA/V^2 Low-field Mobility 404.55 86.84 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 6.7 7.7 7.9 59.6 311.1 0.08 0.08 ohms/sq Contact Resistance 10.1 10.5 9.4 4.95 ohms Gate Oxide Thickness 42 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 1411.2 0.08 0.08 0.04 931 ohms/sq Contact Resistance 9.68 14.71 19.55 21.86 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 954 1147 103 37 18 13 8 8 3 129 129 aF/um^2 Area (N+active) 8261 49 19 13 10 9 8 aF/um^2 Area (P+active) 8054 aF/um^2 Area (poly) 57 16 10 7 5 4 aF/um^2 Area (metal1) 36 14 9 6 5 aF/um^2 Area (metal2) 39 14 9 7 aF/um^2 Area (metal3) 37 14 9 aF/um^2 Area (metal4) 36 14 aF/um^2 Area (metal5) 39 1003 aF/um^2 Area (r well) 938 aF/um^2 Area (d well) 579 aF/um^2 Area (no well) 140 aF/um^2 Fringe (substrate) 257 213 -- 59 54 41 24 -- aF/um Fringe (poly) 64 38 29 23 19 17 aF/um Fringe (metal1) 49 33 22 19 aF/um Fringe (metal2) 45 35 27 23 aF/um Fringe (metal3) 52 35 28 aF/um Fringe (metal4) 60 36 aF/um Fringe (metal5) 54 aF/um Overlap (N+active) 802 aF/um Overlap (P+active) 658 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.75 volts Vinv 1.5 0.80 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.63 volts Vinv 2.0 0.83 volts Gain 2.0 -23.17 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 312.72 MHz DIV1024 (31-stg,1.8V) 375.14 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T53R SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: May 19/05 * LOT: T53R WAF: 7005 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.2E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3729345 +K1 = 0.5911591 K2 = 3.007223E-3 K3 = 1E-3 +K3B = 2.3393631 W0 = 1E-7 NLX = 1.742723E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.5143867 DVT1 = 0.4394265 DVT2 = 0.0461099 +U0 = 256.2652827 UA = -1.528208E-9 UB = 2.382175E-18 +UC = 4.869842E-11 VSAT = 1.048225E5 A0 = 1.9933604 +AGS = 0.4270688 B0 = 3.490909E-7 B1 = 5E-6 +KETA = -0.0131087 A1 = 0 A2 = 0.9073425 +RDSW = 137.1370976 PRWG = 0.3389529 PRWB = -0.2 +WR = 1 WINT = 1.948048E-10 LINT = 1.447793E-8 +XL = 0 XW = -1E-8 DWG = -4.571064E-9 +DWB = 9.725675E-9 VOFF = -0.0920056 NFACTOR = 2.4661822 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 2.799633E-3 ETAB = 9.440921E-6 +DSUB = 0.0163514 PCLM = 0.7476704 PDIBLC1 = 0.1642233 +PDIBLC2 = 2.170537E-3 PDIBLCB = -0.1 DROUT = 0.6895268 +PSCBE1 = 8E10 PSCBE2 = 1.714915E-9 PVAG = 1.745429E-3 +DELTA = 0.01 RSH = 6.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 8.02E-10 CGSO = 8.02E-10 CGBO = 1E-12 +CJ = 9.50106E-4 PB = 0.8 MJ = 0.3783704 +CJSW = 2.429356E-10 PBSW = 0.8 MJSW = 0.1155199 +CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1155199 +CF = 0 PVTH0 = -9.861363E-4 PRDSW = -3.1061658 +PK2 = 8.347166E-4 WKETA = 2.838389E-4 LKETA = -7.160166E-3 +PU0 = 4.1578782 PUA = -1.64205E-13 PUB = 0 +PVSAT = 1.305917E3 PETA0 = 6.567234E-5 PKETA = -8.535331E-4 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.2E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.4075115 +K1 = 0.5857189 K2 = 0.0331921 K3 = 0 +K3B = 12.2405601 W0 = 1E-6 NLX = 8.34956E-8 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.540657 DVT1 = 0.3618395 DVT2 = 0.1 +U0 = 114.351172 UA = 1.500235E-9 UB = 1E-21 +UC = -7.63355E-11 VSAT = 2E5 A0 = 1.8616494 +AGS = 0.4071023 B0 = 5.347155E-7 B1 = 1.719601E-6 +KETA = 0.0184405 A1 = 0.5644893 A2 = 0.3 +RDSW = 247.8365148 PRWG = 0.5 PRWB = -0.0937912 +WR = 1 WINT = 0 LINT = 2.540644E-8 +XL = 0 XW = -1E-8 DWG = -3.336159E-8 +DWB = 9.779975E-9 VOFF = -0.0923541 NFACTOR = 1.8856469 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.0558438 ETAB = -0.0374936 +DSUB = 0.8784624 PCLM = 2.9106088 PDIBLC1 = 1.331262E-4 +PDIBLC2 = 0.0333116 PDIBLCB = -1E-3 DROUT = 9.970234E-4 +PSCBE1 = 3.204313E9 PSCBE2 = 9.273321E-10 PVAG = 15 +DELTA = 0.01 RSH = 7.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.58E-10 CGSO = 6.58E-10 CGBO = 1E-12 +CJ = 1.16195E-3 PB = 0.8347189 MJ = 0.4033366 +CJSW = 2.053873E-10 PBSW = 0.8582178 MJSW = 0.3123837 +CJSWG = 4.22E-10 PBSWG = 0.8582178 MJSWG = 0.3123837 +CF = 0 PVTH0 = 1.204949E-3 PRDSW = 2.1519589 +PK2 = 1.902399E-3 WKETA = 0.0277547 LKETA = -3.019454E-3 +PU0 = -0.8585387 PUA = -4.63302E-11 PUB = 1E-21 +PVSAT = -50 PETA0 = -2.003159E-4 PKETA = -3.997451E-3 ) *