MOSIS WAFER ACCEPTANCE TESTS RUN: T6CA (MM_NON-EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.50 -0.52 volts SHORT 20.0/0.18 Idss 573 -272 uA/um Vth 0.51 -0.51 volts Vpt 4.8 -5.4 volts WIDE 20.0/0.18 Ids0 24.1 -12.5 pA/um LARGE 50/50 Vth 0.42 -0.41 volts Vjbkd 3.2 -4.3 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 167.9 -34.8 uA/V^2 Low-field Mobility 398.71 82.64 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 7.1 7.9 8.2 61.8 322.2 0.08 0.08 ohms/sq Contact Resistance 10.7 10.5 9.8 5.15 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 1060.1 0.08 0.08 0.04 959 ohms/sq Contact Resistance 10.85 16.23 22.26 23.82 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 973 1193 100 37 16 11 8 6 4 124 124 aF/um^2 Area (N+active) 8382 53 20 14 11 9 8 aF/um^2 Area (P+active) 8097 aF/um^2 Area (poly) 65 17 10 7 5 4 aF/um^2 Area (metal1) 34 14 9 6 5 aF/um^2 Area (metal2) 36 14 9 6 aF/um^2 Area (metal3) 36 14 9 aF/um^2 Area (metal4) 37 14 aF/um^2 Area (metal5) 35 1031 aF/um^2 Area (r well) 960 aF/um^2 Area (d well) 566 aF/um^2 Area (no well) 137 aF/um^2 Fringe (substrate) 203 202 aF/um Fringe (poly) 67 38 29 23 20 17 aF/um Fringe (metal1) 52 34 22 19 aF/um Fringe (metal2) 45 34 27 23 aF/um Fringe (metal3) 54 35 28 aF/um Fringe (metal4) 58 36 aF/um Fringe (metal5) 59 aF/um Overlap (N+active) 672 aF/um Overlap (P+active) 755 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.74 volts Vinv 1.5 0.79 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.63 volts Vinv 2.0 0.82 volts Gain 2.0 -21.92 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 314.47 MHz DIV1024 (31-stg,1.8V) 385.20 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T6CA SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Mar 23/07 * LOT: T6CA WAF: 4106 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3733532 +K1 = 0.587078 K2 = 4.059963E-3 K3 = 0.3810095 +K3B = 1.1941168 W0 = 1E-7 NLX = 1.647058E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.5052991 DVT1 = 0.4157194 DVT2 = 0.0129949 +U0 = 273.173305 UA = -1.393073E-9 UB = 2.478268E-18 +UC = 7.521099E-11 VSAT = 9.736683E4 A0 = 1.8623155 +AGS = 0.4283393 B0 = 3.532543E-7 B1 = 5E-6 +KETA = -0.0126287 A1 = 0.6826771 A2 = 1 +RDSW = 105 PRWG = 0.3684748 PRWB = -0.2 +WR = 1 WINT = 2.470319E-9 LINT = 1.736282E-8 +XL = 0 XW = -1E-8 DWG = -2.419328E-9 +DWB = 2.495768E-9 VOFF = -0.0919267 NFACTOR = 2.3849135 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 2.758243E-3 ETAB = 3.136779E-6 +DSUB = 0.0159047 PCLM = 0.7058028 PDIBLC1 = 0.1380714 +PDIBLC2 = 2.622613E-3 PDIBLCB = -0.1 DROUT = 0.6681331 +PSCBE1 = 8E10 PSCBE2 = 1.723517E-9 PVAG = 2.977943E-3 +DELTA = 0.01 RSH = 7.1 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.72E-10 CGSO = 6.72E-10 CGBO = 1E-12 +CJ = 9.698851E-4 PB = 0.8 MJ = 0.3772992 +CJSW = 1.98705E-10 PBSW = 0.7 MJSW = 0.1935161 +CJSWG = 3.3E-10 PBSWG = 0.7 MJSWG = 0.1935161 +CF = 0 PVTH0 = -7.759387E-4 PRDSW = -1.0928172 +PK2 = 3.374168E-4 WKETA = -9.462713E-4 LKETA = -7.7094E-3 +PU0 = 8.0097734 PUA = 9.219838E-12 PUB = 0 +PVSAT = 1.203202E3 PETA0 = 1E-4 PKETA = 1.659347E-3 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3931646 +K1 = 0.5890152 K2 = 0.0219055 K3 = 0 +K3B = 4.9020953 W0 = 1E-6 NLX = 8.893989E-8 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.5984819 DVT1 = 0.299897 DVT2 = 0.1 +U0 = 109.4948975 UA = 1.365211E-9 UB = 1.341098E-21 +UC = -1E-10 VSAT = 1.857108E5 A0 = 1.9851821 +AGS = 0.4371818 B0 = 4.056821E-7 B1 = 9.956167E-7 +KETA = 0.0106869 A1 = 0.2701408 A2 = 0.3 +RDSW = 223.7913198 PRWG = 0.5 PRWB = -0.0577403 +WR = 1 WINT = 0 LINT = 2.949742E-8 +XL = 0 XW = -1E-8 DWG = -1.934542E-8 +DWB = -5.71916E-10 VOFF = -0.0981743 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.1039335 ETAB = -0.0412804 +DSUB = 0.8893397 PCLM = 2.1476592 PDIBLC1 = 2.122633E-4 +PDIBLC2 = 0.0242017 PDIBLCB = -1E-3 DROUT = 9.942962E-4 +PSCBE1 = 1.722E9 PSCBE2 = 5E-10 PVAG = 14.7210087 +DELTA = 0.01 RSH = 7.9 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.55E-10 CGSO = 7.55E-10 CGBO = 1E-12 +CJ = 1.202335E-3 PB = 0.8711074 MJ = 0.4135211 +CJSW = 1.897472E-10 PBSW = 0.8 MJSW = 0.3870769 +CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3870769 +CF = 0 PVTH0 = 2.279028E-3 PRDSW = 5.6823415 +PK2 = 2.421845E-3 WKETA = 0.0236673 LKETA = -3.929293E-3 +PU0 = -1.8304833 PUA = -6.61078E-11 PUB = 1.066469E-22 +PVSAT = -50 PETA0 = 1E-4 PKETA = -2.955597E-3 ) *