MOSIS WAFER ACCEPTANCE TESTS RUN: T69J (MM_NON-EPI_THK-MTL) VENDOR: TSMC TECHNOLOGY: SCN025 FEATURE SIZE: 0.25 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: TSMC 0251P5M TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.36/0.24 Vth 0.49 -0.45 volts SHORT 20.0/0.24 Idss 601 -275 uA/um Vth 0.50 -0.49 volts Vpt 7.6 -7.4 volts WIDE 20.0/0.24 Ids0 8.8 -3.9 pA/um LARGE 50/50 Vth 0.42 -0.54 volts Vjbkd 5.1 -6.6 volts Ijlk <50.0 <50.0 pA Gamma 0.42 0.58 V^0.5 K' (Uo*Cox/2) 121.3 -26.3 uA/V^2 Low-field Mobility 393.44 85.30 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN5M_DEEP (lambda=0.12) 0.00 -0.04 thick oxide, NMOS -0.01 -0.04 thick oxide, PMOS -0.06 SCN6M_SUBM (lambda=0.15) -0.06 0.00 thick oxide, NMOS -0.10 0.00 thick oxide, PMOS -0.15 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ PLY+BLK N+BLK POLY M1 M2 UNITS Sheet Resistance 3.7 2.9 166.8 58.4 3.2 0.07 0.07 ohms/sq Contact Resistance 5.7 4.9 4.7 2.94 ohms Gate Oxide Thickness 56 angstrom PROCESS PARAMETERS M3 M4 M5 N_W UNITS Sheet Resistance 0.07 0.07 0.02 1098 ohms/sq Contact Resistance 5.66 8.36 11.23 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M4P M1 M2 N_W D_N_W UNITS Area (substrate) 1762 1862 99 32 13 123 aF/um^2 Area (N+active) 6149 aF/um^2 Area (P+active) 5883 aF/um^2 Area (poly) 65 aF/um^2 Area (metal1) 38 aF/um^2 Area (metal4) 963 aF/um^2 Area (r well) 1778 aF/um^2 Area (no well) 1127 aF/um^2 Fringe (substrate) 388 316 aF/um Overlap (N+active) 481 aF/um Overlap (P+active) 574 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.02 volts Vinv 1.5 1.11 volts Vol (100 uA) 2.0 0.13 volts Voh (100 uA) 2.0 2.25 volts Vinv 2.0 1.17 volts Gain 2.0 -17.27 Ring Oscillator Freq. DIV1024 (31-stg,2.5V) 258.39 MHz D1024_THK (31-stg,3.3V) 201.58 MHz Ring Oscillator Power DIV1024 (31-stg,2.5V) 0.06 uW/MHz/gate D1024_THK (31-stg,3.3V) 0.10 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T69J SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Nov 13/06 * LOT: T69J WAF: 5001 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 5.6E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3738545 +K1 = 0.4611103 K2 = 1.171665E-3 K3 = 1E-3 +K3B = 2.8450038 W0 = 1.007891E-7 NLX = 1.949058E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.4897612 DVT1 = 0.590756 DVT2 = -0.5 +U0 = 306.0974721 UA = -1.243009E-9 UB = 2.541746E-18 +UC = 4.351624E-11 VSAT = 1.305721E5 A0 = 1.7045496 +AGS = 0.339647 B0 = 5.309286E-10 B1 = -1E-7 +KETA = -5.943721E-3 A1 = 1.068424E-4 A2 = 0.4998614 +RDSW = 200 PRWG = 0.2329509 PRWB = -0.107834 +WR = 1 WINT = 0 LINT = 0 +XL = 0 XW = -4E-8 DWG = -1.601359E-8 +DWB = 8.525708E-9 VOFF = -0.1034475 NFACTOR = 1.5269009 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 6.308597E-3 ETAB = 4.255625E-4 +DSUB = 0.0453089 PCLM = 1.587228 PDIBLC1 = 0.9931243 +PDIBLC2 = 2.42155E-3 PDIBLCB = -0.0777865 DROUT = 1 +PSCBE1 = 7.960248E10 PSCBE2 = 5.859046E-10 PVAG = 1.011425E-7 +DELTA = 0.01 RSH = 3.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 4.81E-10 CGSO = 4.81E-10 CGBO = 1E-12 +CJ = 1.749293E-3 PB = 0.99 MJ = 0.4627581 +CJSW = 3.778747E-10 PBSW = 0.8579017 MJSW = 0.3034734 +CJSWG = 3.29E-10 PBSWG = 0.8579017 MJSWG = 0.3034734 +CF = 0 PVTH0 = -8.266028E-3 PRDSW = -10 +PK2 = 4.106438E-3 WKETA = 2.52245E-3 LKETA = -4.714626E-3 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 5.6E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.5172085 +K1 = 0.6064522 K2 = 1.698285E-3 K3 = 0.0994592 +K3B = 10.1210671 W0 = 1E-6 NLX = 8.147313E-9 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 2.1090495 DVT1 = 0.7980646 DVT2 = -0.1890943 +U0 = 102.7625144 UA = 1.083104E-9 UB = 1.29688E-21 +UC = -1E-10 VSAT = 1.699977E5 A0 = 1.1348876 +AGS = 0.1807929 B0 = 4.05804E-7 B1 = 2.689069E-6 +KETA = 5.765945E-3 A1 = 0.0252824 A2 = 0.3 +RDSW = 1.251877E3 PRWG = 0.0618971 PRWB = -0.1725961 +WR = 1 WINT = 0 LINT = 2.762435E-8 +XL = 0 XW = -4E-8 DWG = -3.736314E-8 +DWB = -4.25895E-11 VOFF = -0.1329273 NFACTOR = 0.9684486 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.2841334 ETAB = -0.0791617 +DSUB = 1.1499883 PCLM = 1.2988816 PDIBLC1 = 8.239672E-3 +PDIBLC2 = -9.980253E-6 PDIBLCB = -1E-3 DROUT = 0.1101215 +PSCBE1 = 6.936005E10 PSCBE2 = 5E-10 PVAG = 0.014765 +DELTA = 0.01 RSH = 2.9 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 5.74E-10 CGSO = 5.74E-10 CGBO = 1E-12 +CJ = 1.86839E-3 PB = 0.9770877 MJ = 0.4666748 +CJSW = 3.264822E-10 PBSW = 0.9213451 MJSW = 0.3260214 +CJSWG = 2.5E-10 PBSWG = 0.9213451 MJSWG = 0.3260214 +CF = 0 PVTH0 = 5.444862E-3 PRDSW = 1.8964188 +PK2 = 2.955956E-3 WKETA = 0.0316379 LKETA = -6.214148E-3 ) *