MOSIS WAFER ACCEPTANCE TESTS RUN: T77A (MM_NON-EPI_THK-MTL) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.49 -0.51 volts SHORT 20.0/0.18 Idss 573 -258 uA/um Vth 0.51 -0.50 volts Vpt 4.8 -5.4 volts WIDE 20.0/0.18 Ids0 20.7 -9.3 pA/um LARGE 50/50 Vth 0.42 -0.41 volts Vjbkd 3.2 -4.3 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 173.5 -35.2 uA/V^2 Low-field Mobility 412.01 83.59 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 6.8 7.6 7.9 60.0 317.7 0.08 0.08 ohms/sq Contact Resistance 10.2 10.5 9.6 4.96 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 1043.6 0.08 0.08 0.01 936 ohms/sq Contact Resistance 9.82 14.88 19.38 21.28 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 955 1175 103 33 14 8 6 5 3 119 119 aF/um^2 Area (N+active) 8431 54 19 13 10 9 8 aF/um^2 Area (P+active) 8143 aF/um^2 Area (poly) 65 17 10 7 5 4 aF/um^2 Area (metal1) 35 14 9 6 5 aF/um^2 Area (metal2) 35 14 9 6 aF/um^2 Area (metal3) 37 15 9 aF/um^2 Area (metal4) 37 14 aF/um^2 Area (metal5) 37 1045 aF/um^2 Area (r well) 940 aF/um^2 Area (d well) 564 aF/um^2 Area (no well) 129 aF/um^2 Fringe (substrate) 205 231 41 35 28 21 14 16 aF/um Fringe (poly) 63 39 29 23 20 18 aF/um Fringe (metal1) 53 34 22 20 aF/um Fringe (metal2) 51 35 27 24 aF/um Fringe (metal3) 53 34 30 aF/um Fringe (metal4) 59 39 aF/um Fringe (metal5) 62 aF/um Overlap (N+active) 835 aF/um Overlap (P+active) 770 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.74 volts Vinv 1.5 0.78 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.63 volts Vinv 2.0 0.82 volts Gain 2.0 -24.85 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 299.29 MHz DIV1024 (31-stg,1.8V) 363.37 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T77A SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Oct 15/07 * LOT: T77A WAF: 2007 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3698438 +K1 = 0.5791729 K2 = 2.347381E-3 K3 = 1E-3 +K3B = 0.0296254 W0 = 1E-7 NLX = 1.593114E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.293377 DVT1 = 0.4136424 DVT2 = 0.0282303 +U0 = 289.4363878 UA = -1.26189E-9 UB = 2.349626E-18 +UC = 6.702821E-11 VSAT = 1.645963E5 A0 = 2 +AGS = 0.4538766 B0 = 8.032151E-8 B1 = 5E-6 +KETA = -0.0172443 A1 = 8.874766E-4 A2 = 0.3193704 +RDSW = 108.4122516 PRWG = 0.5 PRWB = -0.1971138 +WR = 1 WINT = 0 LINT = 1.972669E-8 +XL = 0 XW = -1E-8 DWG = -3.909162E-9 +DWB = -8.578555E-9 VOFF = -0.0948017 NFACTOR = 2.1860065 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 1.761713E-3 ETAB = 6.028975E-5 +DSUB = 0.0147215 PCLM = 1.8713443 PDIBLC1 = 0.21557 +PDIBLC2 = 1.417694E-3 PDIBLCB = -0.1 DROUT = 0.8082945 +PSCBE1 = 3.596688E10 PSCBE2 = 2.92179E-8 PVAG = 0 +DELTA = 0.01 RSH = 6.8 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 8.35E-10 CGSO = 8.35E-10 CGBO = 1E-12 +CJ = 9.51199E-4 PB = 0.8 MJ = 0.3736523 +CJSW = 1.960953E-10 PBSW = 0.8 MJSW = 0.1338441 +CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1338441 +CF = 0 PVTH0 = -4.526939E-3 PRDSW = -0.6554852 +PK2 = 1.930915E-3 WKETA = -5.333761E-4 LKETA = 2.317E-3 +PU0 = -3.6211047 PUA = -4.50812E-11 PUB = 9.327954E-24 +PVSAT = 1.654692E3 PETA0 = 8.419221E-5 PKETA = -3.320264E-4 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3883026 +K1 = 0.5839475 K2 = 0.0199931 K3 = 0.1582733 +K3B = 4.2718556 W0 = 1E-6 NLX = 1.039112E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.5851487 DVT1 = 0.2713811 DVT2 = 0.1 +U0 = 112.3925529 UA = 1.426724E-9 UB = 1.162223E-21 +UC = -1E-10 VSAT = 1.010482E5 A0 = 1.5319217 +AGS = 0.3156768 B0 = 4.919304E-7 B1 = 1.450502E-6 +KETA = 0.0266792 A1 = 0.3861198 A2 = 0.4331546 +RDSW = 198.9661513 PRWG = 0.5 PRWB = -0.4961116 +WR = 1 WINT = 0 LINT = 2.941711E-8 +XL = 0 XW = -1E-8 DWG = -2.683527E-8 +DWB = -6.419295E-9 VOFF = -0.0945858 NFACTOR = 1.9436984 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 1.410905E-4 ETAB = -2.481252E-4 +DSUB = 3.193738E-4 PCLM = 0.9293749 PDIBLC1 = 3.269404E-3 +PDIBLC2 = -4.376991E-6 PDIBLCB = -1E-3 DROUT = 0 +PSCBE1 = 5.497672E10 PSCBE2 = 5.678848E-10 PVAG = 0.010994 +DELTA = 0.01 RSH = 7.6 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.7E-10 CGSO = 7.7E-10 CGBO = 1E-12 +CJ = 1.158375E-3 PB = 0.8489941 MJ = 0.4112418 +CJSW = 2.135911E-10 PBSW = 0.8 MJSW = 0.3294677 +CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3294677 +CF = 0 PVTH0 = 1.676533E-5 PRDSW = 7.499672 +PK2 = 1.286966E-3 WKETA = 0.0132836 LKETA = -2.943003E-3 +PU0 = -0.9519736 PUA = -3.28033E-11 PUB = 1E-21 +PVSAT = 50 PETA0 = 6.807097E-5 PKETA = -3.901329E-3 ) * Download Text File