MOSIS WAFER ACCEPTANCE TESTS RUN: T69H (MM_EPI) VENDOR: TSMC TECHNOLOGY: SCN035 FEATURE SIZE: 0.35 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: TSMC 035 TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.6/0.4 Vth 0.55 -0.77 volts SHORT 20.0/0.4 Idss 515 -236 uA/um Vth 0.58 -0.75 volts Vpt 9.2 -9.8 volts WIDE 20.0/0.4 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.51 -0.75 volts Vjbkd 8.7 -8.5 volts Ijlk <50.0 <50.0 pA Gamma 0.58 0.36 V^0.5 K' (Uo*Cox/2) 92.5 -32.1 uA/V^2 Low-field Mobility 412.53 143.16 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCMOS_SUBM (lambda=0.20) -0.05 0.15 thick oxide -0.10 0.15 SCMOS (lambda=0.25) -0.15 0.15 thick oxide -0.25 0.15 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >10.0 <-10.0 volts PROCESS PARAMETERS N+ P+ POLY POLY2 M1 M2 M3 UNITS Sheet Resistance 80.0 148.4 8.2 44.5 0.07 0.07 0.07 ohms/sq Contact Resistance 68.9 128.0 6.7 37.4 1.06 1.28 ohms Gate Oxide Thickness 77 angstrom PROCESS PARAMETERS M4 POLY2_ME N\PLY N_W UNITS Sheet Resistance 0.04 44.6 1052 1010 ohms/sq Contact Resistance 1.09 ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ P+ POLY POLY2 M1 M2 M3 M4 N_W UNITS Area (substrate) 906 1423 111 28 12 7 6 111 aF/um^2 Area (N+active) 4509 37 17 12 9 aF/um^2 Area (P+active) 4557 aF/um^2 Area (poly) 905 52 15 9 6 aF/um^2 Area (poly2) 50 aF/um^2 Area (metal1) 37 13 8 aF/um^2 Area (metal2) 35 13 aF/um^2 Area (metal3) 35 aF/um^2 Fringe (substrate) 297 342 43 29 20 12 aF/um Fringe (poly) 65 39 29 23 aF/um Fringe (metal1) 48 35 27 aF/um Fringe (metal2) 51 36 aF/um Fringe (metal3) 57 aF/um Overlap (N+active) 310 aF/um Overlap (P+active) 338 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.22 volts Vinv 1.5 1.36 volts Vol (100 uA) 2.0 0.22 volts Voh (100 uA) 2.0 2.92 volts Vinv 2.0 1.47 volts Gain 2.0 -18.73 Ring Oscillator Freq. DIV256 (31-stg,3.3V) 174.39 MHz D256_THK (31-stg,5.0V) 117.05 MHz Ring Oscillator Power DIV256 (31-stg,3.3V) 0.16 uW/MHz/gate D256_THK (31-stg,5.0V) 0.31 uW/MHz/gate COMMENTS: SUBMICRON T69H SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Nov 2/06 * LOT: T69H WAF: 5003 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 7.7E-9 +XJ = 1E-7 NCH = 2.2E17 VTH0 = 0.4739035 +K1 = 0.5980711 K2 = 2.129508E-4 K3 = 89.1316051 +K3B = -8.9451617 W0 = 3.267588E-5 NLX = 2.389619E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 3.090362 DVT1 = 0.7427518 DVT2 = -0.1500347 +U0 = 385.646076 UA = -4.6434E-10 UB = 2.099304E-18 +UC = 3.944494E-11 VSAT = 1.584114E5 A0 = 1.1776486 +AGS = 0.1836559 B0 = 7.523723E-7 B1 = 5E-6 +KETA = 2.991409E-3 A1 = 0 A2 = 0.4259175 +RDSW = 1.060209E3 PRWG = -0.0949099 PRWB = -0.0949472 +WR = 1 WINT = 1.45681E-7 LINT = 0 +XL = -5E-8 XW = 1.5E-7 DWG = -5.436366E-9 +DWB = 4.655955E-9 VOFF = -0.0938652 NFACTOR = 1.3714105 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.9911705 ETAB = 0.0151948 +DSUB = 0.8661705 PCLM = 1.6432607 PDIBLC1 = 1.509754E-3 +PDIBLC2 = 1.479156E-3 PDIBLCB = 0.1 DROUT = 0 +PSCBE1 = 7.204688E8 PSCBE2 = 6.67778E-4 PVAG = 0 +DELTA = 0.01 RSH = 80 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 3.1E-10 CGSO = 3.1E-10 CGBO = 1E-12 +CJ = 9.161291E-4 PB = 0.8 MJ = 0.3472772 +CJSW = 3.326018E-10 PBSW = 0.8 MJSW = 0.1126914 +CJSWG = 1.82E-10 PBSWG = 0.8 MJSWG = 0.1126914 +CF = 0 PVTH0 = -0.0227383 PRDSW = -91.0475464 +PK2 = 2.618518E-3 WKETA = -1.530315E-3 LKETA = -7.775726E-4 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 7.7E-9 +XJ = 1E-7 NCH = 8.52E16 VTH0 = -0.7163484 +K1 = 0.408893 K2 = -4.658963E-3 K3 = 83.7384608 +K3B = -5 W0 = 6.344557E-6 NLX = 2.240363E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.6210073 DVT1 = 0.5540586 DVT2 = 4.208854E-4 +U0 = 152.1750181 UA = 1.104005E-10 UB = 1.869373E-18 +UC = -1.72527E-11 VSAT = 1.303949E5 A0 = 1.0511452 +AGS = 0.3481503 B0 = 2.548932E-6 B1 = 5E-6 +KETA = -6.220316E-3 A1 = 1.304949E-4 A2 = 1 +RDSW = 4E3 PRWG = -0.1517701 PRWB = 0.0807754 +WR = 1 WINT = 1.472296E-7 LINT = 0 +XL = -5E-8 XW = 1.5E-7 DWG = -1.708734E-8 +DWB = 9.651369E-9 VOFF = -0.1353734 NFACTOR = 1.8615508 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.0402356 ETAB = 3.101076E-3 +DSUB = 0.4414883 PCLM = 4.0879121 PDIBLC1 = 1.7464E-4 +PDIBLC2 = 7.295654E-3 PDIBLCB = 0.049958 DROUT = 9.989502E-4 +PSCBE1 = 7.963794E10 PSCBE2 = 5E-10 PVAG = 4.3044365 +DELTA = 0.01 RSH = 148.4 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 3.38E-10 CGSO = 3.38E-10 CGBO = 1E-12 +CJ = 1.413045E-3 PB = 0.99 MJ = 0.5610227 +CJSW = 2.971607E-10 PBSW = 0.99 MJSW = 0.38282 +CJSWG = 4.42E-11 PBSWG = 0.99 MJSWG = 0.38282 +CF = 0 PVTH0 = 7.40325E-3 PRDSW = -47.9669555 +PK2 = 2.016103E-3 WKETA = 1.675253E-3 LKETA = -3.463411E-3 ) *